JPH043113B2 - - Google Patents
Info
- Publication number
- JPH043113B2 JPH043113B2 JP59017269A JP1726984A JPH043113B2 JP H043113 B2 JPH043113 B2 JP H043113B2 JP 59017269 A JP59017269 A JP 59017269A JP 1726984 A JP1726984 A JP 1726984A JP H043113 B2 JPH043113 B2 JP H043113B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- base
- thyristor
- channel
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/138—Thyristors having built-in components the built-in components being FETs
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46416183A | 1983-02-04 | 1983-02-04 | |
| US464161 | 1983-02-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59155169A JPS59155169A (ja) | 1984-09-04 |
| JPH043113B2 true JPH043113B2 (en]) | 1992-01-22 |
Family
ID=23842796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59017269A Granted JPS59155169A (ja) | 1983-02-04 | 1984-02-03 | Ｉｇｆｅｔ／絶縁ゲート・トリガー・サイリスタ混成電力スイッチング半導体デバイス |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0118007B1 (en]) |
| JP (1) | JPS59155169A (en]) |
| DE (1) | DE3482354D1 (en]) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4618872A (en) * | 1983-12-05 | 1986-10-21 | General Electric Company | Integrated power switching semiconductor devices including IGT and MOSFET structures |
| JPS63288064A (ja) * | 1987-05-20 | 1988-11-25 | Toshiba Corp | 複合サイリスタ |
| JPH0680832B2 (ja) * | 1987-09-30 | 1994-10-12 | 日本電気株式会社 | 半導体装置 |
| ATE93654T1 (de) * | 1988-04-22 | 1993-09-15 | Asea Brown Boveri | Abschaltbares leistungshalbleiterbauelement. |
| DE69032084T2 (de) * | 1989-11-17 | 1998-07-16 | Toshiba Kawasaki Kk | Halbleiteranordnung mit zusammengesetzter Bipolar-MOS-Elementpille, geeignet für eine Druckkontaktstruktur |
| JPH0831606B2 (ja) * | 1989-11-17 | 1996-03-27 | 株式会社東芝 | 大電力用半導体装置 |
| DE4127033A1 (de) * | 1991-08-16 | 1993-02-18 | Asea Brown Boveri | Mos-gesteuerter thyristor mct |
| JPH07292984A (ja) * | 1994-04-22 | 1995-11-07 | Haga Kensetsu:Kk | 鉄筋型枠受台 |
| CN104393034B (zh) * | 2014-11-25 | 2017-11-14 | 电子科技大学 | 一种mos栅控晶闸管的制造方法 |
| US10411694B2 (en) | 2016-07-22 | 2019-09-10 | Abb Schweiz Ag | Solid state switch system |
| US10554201B2 (en) | 2016-07-22 | 2020-02-04 | Abb Schweiz Ag | Solid state switch system |
| CN107527951B (zh) * | 2017-09-19 | 2019-11-01 | 电子科技大学 | 一种具有高输入电容的阴极短路栅控晶闸管 |
| US11469757B2 (en) | 2020-10-16 | 2022-10-11 | Abb Schweiz Ag | Solid-state power switch |
| US11641103B2 (en) | 2020-11-06 | 2023-05-02 | Abb Schweiz Ag | Power semiconductor switch clamping circuit |
| US11955900B2 (en) | 2021-06-30 | 2024-04-09 | Abb Schweiz Ag | Soft turn-off for motor controllers |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2904424C2 (de) * | 1979-02-06 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
| DE3024015A1 (de) * | 1980-06-26 | 1982-01-07 | Siemens AG, 1000 Berlin und 8000 München | Steuerbarer halbleiterschalter |
| FR2488046A1 (fr) * | 1980-07-31 | 1982-02-05 | Silicium Semiconducteur Ssc | Dispositif de puissance a commande par transistor dmos |
| SE8107136L (sv) * | 1980-12-02 | 1982-06-03 | Gen Electric | Styrelektrodforsedd likriktaranordning |
-
1984
- 1984-01-26 DE DE8484100823T patent/DE3482354D1/de not_active Expired - Lifetime
- 1984-01-26 EP EP84100823A patent/EP0118007B1/en not_active Expired - Lifetime
- 1984-02-03 JP JP59017269A patent/JPS59155169A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| EP0118007A2 (en) | 1984-09-12 |
| JPS59155169A (ja) | 1984-09-04 |
| EP0118007A3 (en) | 1986-06-25 |
| EP0118007B1 (en) | 1990-05-23 |
| DE3482354D1 (de) | 1990-06-28 |
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